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Automatic characterization and modeling of microwave low-noise HEMTs 1-gen-1992 Caddemi A.; Martines G.; Sannino M.
HEMTs for low-noise microwaves: CAD-oriented modeling 1-gen-1992 Caddemi A.; Martines G.; Sannino M.
Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements 1-gen-1993 Caddemi, Alina; Martines, G.; Sannino, M.
Modeling of low-noise microwave HEMTs for CAD-oriented applications 1-gen-1993 Caddemi, Alina; Sannino, M.
Optimization process models active microwave devices 1-gen-1993 Caddemi, Alina; Gambino, G.; Sannino, M.
Small-signal and noise model determination for double polysilicon self-aligned bipolar transistors 1-gen-1994 Caddemi, Alina; Sannino, M.
Frequency- and bias-dependent modeling of silicon PSA transistors for wireless applications from noise and scattering parameters measurements 1-gen-1994 Caddemi, Alina; Sannino, M.
Temperature-dependent noisy models of pseudomorphic HEMTs 1-gen-1994 Caddemi, Alina; Sannino, M.; Mogavero, G.
CAD-oriented noisy small signal models of HEMT's 1-gen-1994 Caddemi, Alina; Sannino, M.
Performance of the optimum noise source reflection coefficient Γo vs. temperature in microwave HEMTs by model analysis 1-gen-1995 Caddemi, Alina; Sannino, M.; Di Prima, F.
Bias-dependent noisy characterization and modeling of polysilicon BJTs for wireless communication systems 1-gen-1995 Caddemi, Alina; Sannino, M.
Trade-off performance properties of pHEMT-based LNAs vs temperature for VSAT applications 1-gen-1995 Caddemi, Alina; Livreri, P.; Sannino, M.
Low-power PSA transistors for microwave communication systems: comparison among bias-dependent models extracted from measured noise and scattering parameters 1-gen-1995 Caddemi, Alina; Sannino, M.
Microwave noise parameters of HEMTs vs. temperature by a simplified measurement procedure 1-gen-1996 Caddemi, Alina; Di Paola, A.; Sannino, M.
Typical aspects of the microwave noise performance of HEMT's at decreasing temperatures 1-gen-1996 Caddemi, Alina; Sannino, M.
Noise parameters of HEMTs: Analysis of their properties from a circuit model approach 1-gen-1996 A. CADDEMI; SANNINO M.
Full characterization of microwave low noise HEMTs: measurements vs. modeling 1-gen-1996 Caddemi, Alina; Di Paola, A.; Sannino, M.
A study on the noise parameters of active devices based on a circuit model approach 1-gen-1996 Caddemi, Alina; Sannino, M.
Comparative performance of the equivalent noise resistance of low-noise microwave FET's 1-gen-1996 Caddemi, Alina; Di Prima, F.; Sannino, M.
Dependence of the noise resistance of microwave FET's from the device characteristics 1-gen-1997 Caddemi, Alina; Di Prima, F.; Sannino, M.
Mostrati risultati da 1 a 20 di 238
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