This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium–nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward “cold” model for modelling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz.
Accurate multibias equivalent-circuit extraction for GaNHEMTs
CRUPI, GIOVANNI;CADDEMI, Alina;
2006-01-01
Abstract
This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium–nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward “cold” model for modelling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.