This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium–nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward “cold” model for modelling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz.

Accurate multibias equivalent-circuit extraction for GaNHEMTs

CRUPI, GIOVANNI;CADDEMI, Alina;
2006-01-01

Abstract

This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium–nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward “cold” model for modelling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz.
2006
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/1833280
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