Frequency- and bias-dependent modeling of silicon PSA transistors for wireless applications from noise and scattering parameters measurements

A complete investigation on the performance of a double polysilicon self-aligned (PSA) bipolar transistor in terms of noise and gain parameters is here reported. The device has been characterized over the 1-4 GHz frequency range in several bias conditions by means of an automatic integrated system. Such system allows for the simultaneous determination of noise, gain and scattering parameters using only noise figure measurements. An accurate noisy model has then been extracted which reproduces the performance of the chip device. This is the first part of an extensive analysis currently in progress on 100 devices having different emitter configuration and size.