In this paper a small-signal and noise modeling approach is developed and applied to GaN HEMTs. The main advantage of the proposed method is its simplicity and dependencyononlypinch-oS-parametermeasurements.Theachieved model shows good fitting with microwave experiments performed on nonlinear solid-state devices with dierent sizes. The model reliability is further confirmed by the observed scaling of the extracted parameters.
Reliable PSO Based Noise Modeling Approach Applied to GaN HEMTs
Crupi, Giovanni;Caddemi, Alina
2018-01-01
Abstract
In this paper a small-signal and noise modeling approach is developed and applied to GaN HEMTs. The main advantage of the proposed method is its simplicity and dependencyononlypinch-oS-parametermeasurements.Theachieved model shows good fitting with microwave experiments performed on nonlinear solid-state devices with dierent sizes. The model reliability is further confirmed by the observed scaling of the extracted parameters.File in questo prodotto:
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