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2-PHOTON ABSORPTION IN SEMICONDUCTORS IN A MAGNETIC FIELD
1971-01-01 Girlanda, Raffaello
INTENSITY OF 2-PHOTON EXCITONIC ABSORPTION IN 2-BAND AND 3-BAND MODELS
1974-01-01 Doni, E; P. A. R. R. A. V. I. C., Gp; Girlanda, Raffaello
NOTE ON POLARIZATION DEPENDENCE OF 2-PHOTON ABSORPTION- COEFFICIENT IN CRYSTALS
1974-01-01 Doni, E; Girlanda, Raffaello; P. A. R. R. A. V. I. C., Gp
SELECTION-RULES FOR DIRECT CREATION OF BIEXCITONS BY GIANT 2- PHOTON ABSORPTION
1975-01-01 Doni, E; Girlanda, Raffaello; Parravicini, Gp
PLASMON BANDS AND GAPS IN METAL CRYSTALS
1976-01-01 Girlanda, Raffaello; Parrinello, M; Tosatti, E.
ANISOTROPY IN 2-PHOTON DIRECT CREATION OF BIEXCITONS IN CUBR CUBIC-CRYSTALS
1976-01-01 Girlanda, Raffaello; Doni, E; Parravicini, Gp
TWO-PHOTON TRANSITIONS IN SOLIDS
1977-01-01 Girlanda, Raffaello
X-RAY PHOTOELECTRON-SPECTRUM AND 2-DIMENSIONAL BAND-STRUCTURE OF INSE
1977-01-01 Balzarotti, A; Girlanda, Raffaello; Grasso, V; Doni, E; Antonangeli, F; Piacentini, M; Baldereschi, A.
WAVE-LENGHT-MODULATED ABSORPTION OF INSE ABOVE FUNDAMENTAL EDGE
1978-01-01 Balzarotti, A; Girlanda, Raffaello; Grasso, V; Perillo, P; Doni, E; Piacentini, M.
VALENCE BAND DENSITY OF STATES AND X-RAY PHOTOELECTRON-SPECTRUM OF GAS
1978-01-01 Balzarotti, A; Girlanda, Raffaello; Grasso, V; Doni, E; Antonangeli, F; Piacentini, M.
NOTE ON POLARIZATION DEPENDENCE OF 2-PHOTON ABSORPTION- COEFFICIENT IN CRYSTALS - EXTENSION TO CIRCULARLY POLARIZED- LIGHT
1978-01-01 Doni, E; Girlanda, Raffaello; Pastoriparravicini, G.
ELECTRONIC PROPERTIES OF LAYER SEMICONDUCTOR INSE
1978-01-01 Depeursinge, Y; Doni, E; Girlanda, Raffaello; Baldereschi, A; Maschke, K.
ELECTRONIC-PROPERTIES OF THE III-VI COMPOUNDS GAS, GASE AND INSE .1. BAND-STRUCTURE
1979-01-01 Doni, E; Girlanda, Raffaello; Grasso, Vincenzo; Balzarotti, A; Piacentini, M.
ELECTRONIC-PROPERTIES OF THE III-VI COMPOUNDS GAS, GASE AND INSE .4. LOW-ENERGY ABSORPTION AND REFLECTIVITY OF INSE
1979-01-01 Piacentini, M; Doni, E; Girlanda, Raffaello; Grasso, Vincenzo; Balzarotti, A.
ELECTRONIC-PROPERTIES OF THE III-VI LAYER COMPOUNS GAS, GASE AND INSE .3. REFLECTIVITY FROM 4 TO 32 EV
1979-01-01 Piacentini, M; Olson, Cg; Balzarotti, A; Girlanda, Raffaello; Grasso, Vincenzo; Doni, E.
ELECTRONIC-PROPERTIES OF THE III-VI COMPOUNDS GAS, GASE AND INSE .2. PHOTOEMISSION
1979-01-01 Antonangeli, F; Piacentini, M; Balzarotti, A; Grasso, Vincenzo; Girlanda, Raffaello; Doni, E.
RELATIONSHIPS BETWEEN THE SEMI-EMPIRICAL AND THE HARTREE-FOCK METHODS IN BAND-STRUCTURE CALCULATIONS
1980-01-01 Doni, E; Resca, L; Resta, R; Girlanda, Raffaello
OVERLAP-REDUCED SEMI-EMPIRICAL TIGHT-BINDING-RELATIONSHIPS WITH 2 DIFFERENT APPROACHES
1980-01-01 Doni, E; Resca, L; Resta, R; Girlanda, Raffaello
GAUGE-INVARIANCE AND 2-PHOTON TRANSITIONS TO EXCITON-STATES IN SEMICONDUCTORS
1980-01-01 Girlanda, Raffaello; Quattropani, A.
X-RAY PHOTOEMISSION SPECTRUM OF THE 3-4 LAYER COMPOUND GATA IN THE REGION OF THE VALENCE BANDS
1981-01-01 Antonangeli, A; Balzarotti, A; Doni, E; Girlanda, Raffaello; Grasso, V; Piacentini, M.
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