CADDEMI, Alina

CADDEMI, Alina  

Dipartimento di Ingegneria  

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Risultati 1 - 20 di 237 (tempo di esecuzione: 0.037 secondi).
Titolo Data di pubblicazione Autore(i) File
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 1-gen-2015 Boukortt, Nour El Islam; Hadri, Baghdad; Caddemi, Alina; Crupi, Giovanni; Patanè, Salvatore
A clear-cut introduction to the de-embedding concept: less is more 1-gen-2013 Crupi, Giovanni; D., Schreurs; Caddemi, Alina
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 1-gen-2012 G. Crupi; A. Raffo; D. M. M.-P. Schreurs; G. Avolio; A. Caddemi; G. Vannini
A global approach to the noise and small-signal characterization of microwave field-effect transistors 1-gen-2001 Caddemi, Alina; Martines, G.
A neural network approach for compact cryogenic modelling of HEMTs 1-gen-2007 CADDEMI A.; CATALFAMO F; DONATO N
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 1-gen-2008 Crupi, Giovanni; SCHREURS D., M; Raffo, A; Caddemi, Alina; Vannini, G.
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 1-gen-2004 Caddemi, Alina; Crupi, Giovanni; Donato, Nicola
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 1-gen-2004 Caddemi, Alina; Donato, Nicola; Crupi, Giovanni
A study on the noise parameters of active devices based on a circuit model approach 1-gen-1996 Caddemi, Alina; Sannino, M.
An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier 1-gen-2018 Caddemi, A; Cardillo, E; Patane, S; Triolo, C
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 1-gen-2011 G. Crupi; A. Raffo; D. M. M.-P. Schreurs; G. Avolio; V. Vadalà; S. Di Falco; A. Caddemi; G. Vannini
Accurate multibias equivalent-circuit extraction for GaNHEMTs 1-gen-2006 Crupi, Giovanni; Xiao, Dp; Schreurs, Dmmp; Limiti, E; Caddemi, Alina; DE RAEDT, W; Germain, M.
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling 1-gen-2010 Crupi, Giovanni; D. M. M. P., Schreurs; Caddemi, Alina
Advanced Simulation of Semiconductor Devices by Artificial Neural Networks 1-gen-2003 Caddemi, Alina; Donato, Nicola; Xibilia, Maria Gabriella
An evolution algorithm for noise modeling of HEMT's down to cryogenic temperatures 1-gen-2006 Caddemi, Alina; Catalfamo, F; Donato, Nicola
An evolution algorithm for noise modeling of HEMT's down to cryogenic temperatures 1-gen-2006 CADDEMI A.; CATALFAMO F; DONATO N
Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors 1-gen-2012 Marinković Z.; Ivković N.; Pronić-Rančić O.; Marković V.; Caddemi A.
Analysis of microwave noise parameters of scaled AlGaAs/GaAs HEMT's under light exposure 1-gen-2013 Caddemi, Alina; Crupi, Giovanni; Fazio, Enza; Patane', Salvatore; Giuseppe, Salvo
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 1-gen-2008 Crupi, Giovanni; Caddemi, Alina; SCHREURS D., M; Homayouni, M; Angelov, I; Parvais, B.
Analysis of the 50 Ω - noise mismatch in microwave low-noise transistors 1-gen-1998 Caddemi, Alina; Di Prima, S.; Sannino, M.