statistiche ricercatore

Continente	#
EU - Europa	778
NA - Nord America	619
AS - Asia	365
SA - Sud America	128
AF - Africa	6
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	1.898

Nazione	#
US - Stati Uniti d'America	609
RU - Federazione Russa	458
SG - Singapore	159
BR - Brasile	105
CN - Cina	105
SE - Svezia	97
IE - Irlanda	95
HK - Hong Kong	37
DE - Germania	32
VN - Vietnam	25
UA - Ucraina	24
FR - Francia	21
FI - Finlandia	17
GB - Regno Unito	17
IN - India	8
AR - Argentina	7
BD - Bangladesh	6
CA - Canada	6
IQ - Iraq	5
IT - Italia	5
VE - Venezuela	5
CO - Colombia	4
BE - Belgio	2
CL - Cile	2
EC - Ecuador	2
JO - Giordania	2
JP - Giappone	2
NL - Olanda	2
PA - Panama	2
PK - Pakistan	2
PL - Polonia	2
SA - Arabia Saudita	2
TR - Turchia	2
UZ - Uzbekistan	2
A2 - ???statistics.table.value.countryCode.A2???	1
AE - Emirati Arabi Uniti	1
AT - Austria	1
BG - Bulgaria	1
CG - Congo	1
CZ - Repubblica Ceca	1
DO - Repubblica Dominicana	1
DZ - Algeria	1
ES - Italia	1
ET - Etiopia	1
ID - Indonesia	1
IL - Israele	1
KE - Kenya	1
KW - Kuwait	1
LB - Libano	1
LV - Lettonia	1
MK - Macedonia	1
MX - Messico	1
MY - Malesia	1
NP - Nepal	1
NZ - Nuova Zelanda	1
OM - Oman	1
PE - Perù	1
PY - Paraguay	1
SN - Senegal	1
TN - Tunisia	1
UY - Uruguay	1
Totale	1.898

Nome	#
Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment	147
Pulsed laser-deposited SnOx: Plasma expansion dynamics effects	140
Correlation between the plasma expansion dynamics and the structural properties of pulsed laser deposited SnOx thin films	139
Structural properties of pulsed laser deposited SnOx thin films	139
Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment.	137
Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation	136
Straightforward hetero-epitaxy of Germanium at very low temperature : application to photovoltaics	133
Structural e photoluminescence properties of SiOxNy irradiated by CW laser IR	131
Synthesis and properties of Si nanocrystals for photovoltaic applications	123
Nano-crystalline Si formed by infrared laser irradiation of CVD deposited a-Si:H	122
Silicon epitaxy below 200°C: Toward micrometer-scale thin film silicon solar cells	117
Crystallization by furnace annealing and laser annealing of highly dose Arsenic implanted amorphous Silicon	116
Electrical Properties of Ultrathin SiO2 Layer Deposited at 50°C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition	116
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation	114
Structural, chemical and optical properties of amorphous SiOxNy layers irradiated by CW IR laser	90
Totale	1.900

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	31	0	0	0	0	0	0	0	0	0	11	10	10
2021/2022	88	0	15	2	2	0	0	2	2	1	0	35	29
2022/2023	323	18	29	18	48	17	35	0	20	127	0	9	2
2023/2024	80	5	16	3	4	3	40	7	0	0	1	0	1
2024/2025	317	0	2	8	7	38	6	2	104	77	7	23	43
2025/2026	856	25	53	38	24	86	180	109	149	157	35	0	0
Totale													1.900