statistiche ricercatore

Continente	#
EU - Europa	778
NA - Nord America	651
AS - Asia	365
SA - Sud America	128
AF - Africa	6
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	1.930

Nazione	#
US - Stati Uniti d'America	641
RU - Federazione Russa	458
SG - Singapore	159
BR - Brasile	105
CN - Cina	105
SE - Svezia	97
IE - Irlanda	95
HK - Hong Kong	37
DE - Germania	32
VN - Vietnam	25
UA - Ucraina	24
FR - Francia	21
FI - Finlandia	17
GB - Regno Unito	17
IN - India	8
AR - Argentina	7
BD - Bangladesh	6
CA - Canada	6
IQ - Iraq	5
IT - Italia	5
VE - Venezuela	5
CO - Colombia	4
BE - Belgio	2
CL - Cile	2
EC - Ecuador	2
JO - Giordania	2
JP - Giappone	2
NL - Olanda	2
PA - Panama	2
PK - Pakistan	2
PL - Polonia	2
SA - Arabia Saudita	2
TR - Turchia	2
UZ - Uzbekistan	2
A2 - ???statistics.table.value.countryCode.A2???	1
AE - Emirati Arabi Uniti	1
AT - Austria	1
BG - Bulgaria	1
CG - Congo	1
CZ - Repubblica Ceca	1
DO - Repubblica Dominicana	1
DZ - Algeria	1
ES - Italia	1
ET - Etiopia	1
ID - Indonesia	1
IL - Israele	1
KE - Kenya	1
KW - Kuwait	1
LB - Libano	1
LV - Lettonia	1
MK - Macedonia	1
MX - Messico	1
MY - Malesia	1
NP - Nepal	1
NZ - Nuova Zelanda	1
OM - Oman	1
PE - Perù	1
PY - Paraguay	1
SN - Senegal	1
TN - Tunisia	1
UY - Uruguay	1
Totale	1.930

Nome	#
Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment	148
Pulsed laser-deposited SnOx: Plasma expansion dynamics effects	143
Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment.	143
Structural properties of pulsed laser deposited SnOx thin films	142
Correlation between the plasma expansion dynamics and the structural properties of pulsed laser deposited SnOx thin films	140
Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation	138
Straightforward hetero-epitaxy of Germanium at very low temperature : application to photovoltaics	136
Structural e photoluminescence properties of SiOxNy irradiated by CW laser IR	135
Nano-crystalline Si formed by infrared laser irradiation of CVD deposited a-Si:H	125
Synthesis and properties of Si nanocrystals for photovoltaic applications	123
Electrical Properties of Ultrathin SiO2 Layer Deposited at 50°C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition	118
Crystallization by furnace annealing and laser annealing of highly dose Arsenic implanted amorphous Silicon	117
Silicon epitaxy below 200°C: Toward micrometer-scale thin film silicon solar cells	117
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation	116
Structural, chemical and optical properties of amorphous SiOxNy layers irradiated by CW IR laser	91
Totale	1.932

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	10	0	0	0	0	0	0	0	0	0	0	0	10
2021/2022	88	0	15	2	2	0	0	2	2	1	0	35	29
2022/2023	323	18	29	18	48	17	35	0	20	127	0	9	2
2023/2024	80	5	16	3	4	3	40	7	0	0	1	0	1
2024/2025	317	0	2	8	7	38	6	2	104	77	7	23	43
2025/2026	888	25	53	38	24	86	180	109	149	157	38	12	17
Totale													1.932