statistiche ricercatore

Continente	#
EU - Europa	780
NA - Nord America	691
AS - Asia	369
SA - Sud America	129
AF - Africa	6
Continente sconosciuto - Info sul continente non disponibili	3
OC - Oceania	1
Totale	1.979

Nazione	#
US - Stati Uniti d'America	678
RU - Federazione Russa	458
SG - Singapore	159
CN - Cina	109
BR - Brasile	106
SE - Svezia	97
IE - Irlanda	95
HK - Hong Kong	37
DE - Germania	32
VN - Vietnam	25
UA - Ucraina	24
FR - Francia	21
FI - Finlandia	17
GB - Regno Unito	17
IN - India	8
AR - Argentina	7
BD - Bangladesh	6
CA - Canada	6
IT - Italia	6
IQ - Iraq	5
VE - Venezuela	5
CO - Colombia	4
BE - Belgio	2
CL - Cile	2
EC - Ecuador	2
JO - Giordania	2
JP - Giappone	2
NL - Olanda	2
PA - Panama	2
PK - Pakistan	2
PL - Polonia	2
SA - Arabia Saudita	2
TR - Turchia	2
UZ - Uzbekistan	2
A2 - ???statistics.table.value.countryCode.A2???	1
AE - Emirati Arabi Uniti	1
AL - Albania	1
AT - Austria	1
BG - Bulgaria	1
CG - Congo	1
CR - Costa Rica	1
CZ - Repubblica Ceca	1
DO - Repubblica Dominicana	1
DZ - Algeria	1
ES - Italia	1
ET - Etiopia	1
ID - Indonesia	1
IL - Israele	1
KE - Kenya	1
KW - Kuwait	1
LB - Libano	1
LV - Lettonia	1
MK - Macedonia	1
MX - Messico	1
MY - Malesia	1
NI - Nicaragua	1
NP - Nepal	1
NZ - Nuova Zelanda	1
OM - Oman	1
PE - Perù	1
PY - Paraguay	1
SN - Senegal	1
TN - Tunisia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
Totale	1.977

Nome	#
Straightforward hetero-epitaxy of Germanium at very low temperature : application to photovoltaics	162
Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment	149
Pulsed laser-deposited SnOx: Plasma expansion dynamics effects	146
Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment.	144
Structural properties of pulsed laser deposited SnOx thin films	143
Correlation between the plasma expansion dynamics and the structural properties of pulsed laser deposited SnOx thin films	141
Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation	139
Structural e photoluminescence properties of SiOxNy irradiated by CW laser IR	135
Nano-crystalline Si formed by infrared laser irradiation of CVD deposited a-Si:H	129
Synthesis and properties of Si nanocrystals for photovoltaic applications	124
Electrical Properties of Ultrathin SiO2 Layer Deposited at 50°C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition	122
Silicon epitaxy below 200°C: Toward micrometer-scale thin film silicon solar cells	120
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation	117
Crystallization by furnace annealing and laser annealing of highly dose Arsenic implanted amorphous Silicon	117
Structural, chemical and optical properties of amorphous SiOxNy layers irradiated by CW IR laser	91
Totale	1.979

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	88	0	15	2	2	0	0	2	2	1	0	35	29
2022/2023	323	18	29	18	48	17	35	0	20	127	0	9	2
2023/2024	80	5	16	3	4	3	40	7	0	0	1	0	1
2024/2025	317	0	2	8	7	38	6	2	104	77	7	23	43
2025/2026	893	25	53	38	24	86	180	109	149	157	38	12	22
2026/2027	42	20	22	0	0	0	0	0	0	0	0	0	0
Totale													1.979