RUGGERI, ROSA
 Distribuzione geografica
Continente #
NA - Nord America 402
EU - Europa 265
AS - Asia 53
SA - Sud America 2
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 724
Nazione #
US - Stati Uniti d'America 400
SE - Svezia 97
IE - Irlanda 95
CN - Cina 48
UA - Ucraina 24
DE - Germania 20
FI - Finlandia 15
GB - Regno Unito 9
IN - India 3
IT - Italia 3
CA - Canada 2
CL - Cile 2
JP - Giappone 2
A2 - ???statistics.table.value.countryCode.A2??? 1
ES - Italia 1
LV - Lettonia 1
NZ - Nuova Zelanda 1
Totale 724
Città #
Chandler 122
Dublin 95
Nyköping 54
Jacksonville 51
Beijing 39
New York 30
Ashburn 16
Cambridge 15
Princeton 15
Boardman 12
Des Moines 12
Medford 12
Woodbridge 8
Dearborn 6
Ann Arbor 3
Hangzhou 3
San Mateo 3
Wilmington 3
Clearwater 2
Kolkata 2
Los Angeles 2
Nanchang 2
Washington 2
Auburn Hills 1
Gisborne 1
Houston 1
Jinan 1
London 1
Madrid 1
Mountain View 1
Nanjing 1
Ningbo 1
Osaka 1
Ottawa 1
Pune 1
Rieti 1
Rome 1
Seattle 1
Shenyang 1
Tokyo 1
Vancouver 1
Totale 527
Nome #
Correlation between the plasma expansion dynamics and the structural properties of pulsed laser deposited SnOx thin films 63
Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment. 60
Structural properties of pulsed laser deposited SnOx thin films 57
Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation 53
Pulsed laser-deposited SnOx: Plasma expansion dynamics effects 51
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation 50
Structural e photoluminescence properties of SiOxNy irradiated by CW laser IR 50
Straightforward hetero-epitaxy of Germanium at very low temperature : application to photovoltaics 50
Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment 49
Crystallization by furnace annealing and laser annealing of highly dose Arsenic implanted amorphous Silicon 47
Synthesis and properties of Si nanocrystals for photovoltaic applications 46
Nano-crystalline Si formed by infrared laser irradiation of CVD deposited a-Si:H 45
Electrical Properties of Ultrathin SiO2 Layer Deposited at 50°C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition 43
Silicon epitaxy below 200°C: Toward micrometer-scale thin film silicon solar cells 39
Structural, chemical and optical properties of amorphous SiOxNy layers irradiated by CW IR laser 23
Totale 726
Categoria #
all - tutte 2.560
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.560


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202093 6 2 0 1 1 7 17 6 0 13 40 0
2020/202176 13 0 6 10 0 15 0 1 0 11 10 10
2021/202288 0 15 2 2 0 0 2 2 1 0 35 29
2022/2023323 18 29 18 48 17 35 0 20 127 0 9 2
2023/202479 5 16 3 4 3 40 7 0 0 1 0 0
Totale 726