Asymptotic electronic-dislocation waves in n-type extrinsic semiconductors with defects of dislocation

A general method devised to construct approximate smooth solutions is applied to a nonlinear hyperbolic partial differential equations describing the interaction between the electronic and the dislocation fields in n-type extrinsic semiconductors with defects of dislocation, described by a non-conventional thermodynamical model deduced in a previous paper by one of the authors (L.R.). In particular, in the one dimensional case, an approximate smooth solution of the introduced system of balance equations is analyzed, the propagation into a uniform unperturbed state is studied and the expression of the velocity along the characteristic rays and the equation of the wave front are determined. Finally, we obtain the transport equation for the first perturbation term of the asymptotic solution, that, using a suitable transformation, can be reduced to an equation valid along the characteristic rays.