Advanced MOSFET design techniques have been recently introduced in the automotive field as an answer to the demand of even more compact and reliable power electronic systems. A key role in these techniques is played by the reliability assessment, a procedure that estimates the expected lifetime of devices under development according to the assigned mission profile. In this paper a planar StripFET structure and a conventional trench gate structure are compared in terms of reliability issues. A key aspect of the reliability assessment procedure accomplished is an experimental dynamic analysis of the temperature distribution over the metal source surface, useful to correlate electric working conditions with thermo-mechanical stresses.
Comparative reliability assessment of Planar and Trench Gate Power MOSFETs for Automotive Applications
TESTA, Antonio;DE CARO, SALVATORE;PANARELLO, SAVERIO;PATANE', Salvatore;
2010-01-01
Abstract
Advanced MOSFET design techniques have been recently introduced in the automotive field as an answer to the demand of even more compact and reliable power electronic systems. A key role in these techniques is played by the reliability assessment, a procedure that estimates the expected lifetime of devices under development according to the assigned mission profile. In this paper a planar StripFET structure and a conventional trench gate structure are compared in terms of reliability issues. A key aspect of the reliability assessment procedure accomplished is an experimental dynamic analysis of the temperature distribution over the metal source surface, useful to correlate electric working conditions with thermo-mechanical stresses.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
