Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers. The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser. The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment.
Crystallization of silicon carbide thin films by pulsed laser irradiation
PROVERBIO, Edoardo;
1996-01-01
Abstract
Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers. The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser. The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment.Pubblicazioni consigliate
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