Magnetic tunnel junctions (MTJ) are becoming very important to make non volatile magnetoresistive memories (MRAM), where the writing mechanism is the spin-transfer-torque (STT). Recently, it has been proved the possibility to use the interface perpendicular anisotropy (IPA), induced in a CoFeB ferromagnet from the interaction with MgO, to improve the switching properties of STT-MRAM cells. This way, high thermal stability and low switching current density (SCD) are achieved [1]. We performed a numerical experiment to study the fast switching processes (switching time smaller than 20 ns) by considering the same experimental framework of Ref. [2]. We fixed the thickness of the free layer (FL) equal to 1.4 nm and systematically studied the switching properties by changing the FL composition (saturation magnetization (MS) and IPA).
Switching properties in magnetic tunnel junctions with interfacial perpendicular anisotropy
PULIAFITO, VITO;AZZERBONI, Bruno;FINOCCHIO, Giovanni
2013-01-01
Abstract
Magnetic tunnel junctions (MTJ) are becoming very important to make non volatile magnetoresistive memories (MRAM), where the writing mechanism is the spin-transfer-torque (STT). Recently, it has been proved the possibility to use the interface perpendicular anisotropy (IPA), induced in a CoFeB ferromagnet from the interaction with MgO, to improve the switching properties of STT-MRAM cells. This way, high thermal stability and low switching current density (SCD) are achieved [1]. We performed a numerical experiment to study the fast switching processes (switching time smaller than 20 ns) by considering the same experimental framework of Ref. [2]. We fixed the thickness of the free layer (FL) equal to 1.4 nm and systematically studied the switching properties by changing the FL composition (saturation magnetization (MS) and IPA).Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
