Li2xMn1-xPS3 films have been synthesized by exfoliating MnPS3 through the successive intercalations of K+ and Li+ ions. After having checked their identity by means of XRD and XPS measurements, their dielectric response has been examined from 80K to 350K in the (20÷1000000)Hz frequency range. Obtained data have been analyzed in terms of both permittivity and ac conductivity. The frequency dependence of ac conductivity has been interpreted in terms of the Jonscher’s law and the exponent n has been found to decrease by increasing temperature. The n values lie between 0.479 to 0.501 and are typical of multiple hops of carriers. By comparing the results with those reported in the literature for MnPS3 and other its alkali metal intercalation compounds the observed dielectric response has been attributed to the lithium ions and the Li2xMn1-xPS3 films have been classified as hopping charge carrier systems.
Dielectric properties of Li2xMn1-xPS3 films
SILIPIGNI, Letteria;MONSU' SCOLARO, Luigi;DE LUCA, Giovanna;SALVATO, GABRIELE
2013-01-01
Abstract
Li2xMn1-xPS3 films have been synthesized by exfoliating MnPS3 through the successive intercalations of K+ and Li+ ions. After having checked their identity by means of XRD and XPS measurements, their dielectric response has been examined from 80K to 350K in the (20÷1000000)Hz frequency range. Obtained data have been analyzed in terms of both permittivity and ac conductivity. The frequency dependence of ac conductivity has been interpreted in terms of the Jonscher’s law and the exponent n has been found to decrease by increasing temperature. The n values lie between 0.479 to 0.501 and are typical of multiple hops of carriers. By comparing the results with those reported in the literature for MnPS3 and other its alkali metal intercalation compounds the observed dielectric response has been attributed to the lithium ions and the Li2xMn1-xPS3 films have been classified as hopping charge carrier systems.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.