Modeling the gate current 1/f noise and its application to advanced CMOS devices

In this work we propose an analytical model for the gate current 1/f noise in CMOS devices. The model is based on a simple idea: one electron trapped in the dielectric switches-off the tunneling through the oxide over an effective blocking area. The model allows evaluating the effective trap density inside the gate dielectric as a function of energy from measurements of the gate current 1/f noise versus gate voltage. Experimental data on advanced CMOS devices confirm the validity and the usefulness of the proposed model. © 2008 IEEE.