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EnglishPerpendicular MgO-based magnetic tunnel junctions are optimal candidates as building blocks of spin-transfer torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below \(10^{\mathrm {\mathbf {6}}}\) A/cm \(^{\mathrm {\mathbf {2}}}\). A recent work has experimentally demonstrated the possibility of performing magnetization switching assisted by an electric-field at ultralow current density. Theoretically, this switching has been studied using a macrospin approach only. Here, we show a full micromagnetic study. We found that the switching occurs via a complex nucleation process including the nucleation of magnetic vortexes. © 1965-2012 IEEE.
| Titolo: | Micromagnetic Study of Electrical-Field-Assisted Magnetization Switching in MTJ Devices | |
| Autori: | ||
| Data di pubblicazione: | 2014 | |
| Rivista: | ||
| Abstract: | Perpendicular MgO-based magnetic tunnel junctions are optimal candidates as building blocks of spin-transfer torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below \(10^{\mathrm {\mathbf {6}}}\) A/cm \(^{\mathrm {\mathbf {2}}}\). A recent work has experimentally demonstrated the possibility of performing magnetization switching assisted by an electric-field at ultralow current density. Theoretically, this switching has been studied using a macrospin approach only. Here, we show a full micromagnetic study. We found that the switching occurs via a complex nucleation process including the nucleation of magnetic vortexes. © 1965-2012 IEEE. | |
| Handle: | http://hdl.handle.net/11570/3031574 | |
| Appare nelle tipologie: | 14.a.2 Proceedings in extenso su rivista |
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