In this work, we have designed an UV-LED with multiple-quantum well of GaN/AlGaN to witness the effect of spontaneous polarization on its output characteristics and it shows some promising results. Using Silvaco TCAD it is observed that the influence of spontaneous polarization helps in improving the optical performance of the device. The built-in electric field induced by spontaneous polarization is considered at hetero-interfaces of GaN LED, which has a significant influence for its output power behavior. The simulation results suggest that the optical power in presence of spontaneous polarization is significantly greater than that compared to conventional LED; it is carried out at a temperature of 300 K. The output current, charge concentration, and the normalized power spectral densities for both the cases are discussed in this paper.

Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology

Crupi G.
Ultimo
2021-01-01

Abstract

In this work, we have designed an UV-LED with multiple-quantum well of GaN/AlGaN to witness the effect of spontaneous polarization on its output characteristics and it shows some promising results. Using Silvaco TCAD it is observed that the influence of spontaneous polarization helps in improving the optical performance of the device. The built-in electric field induced by spontaneous polarization is considered at hetero-interfaces of GaN LED, which has a significant influence for its output power behavior. The simulation results suggest that the optical power in presence of spontaneous polarization is significantly greater than that compared to conventional LED; it is carried out at a temperature of 300 K. The output current, charge concentration, and the normalized power spectral densities for both the cases are discussed in this paper.
2021
978-1-6654-4442-2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/3220902
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