This study is aimed at investigating the performance of an advanced GaN HEMT technology for millimeter-wave applications. Both DC and frequency-dependent measurements are performed on three multifinger on-wafer 0.15-µm transistors with different gate widths at different ambient temperatures for foreseeing GaN technology capability when applications require challenging frequency operation.
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis
Crupi G.Secondo
;
2022-01-01
Abstract
This study is aimed at investigating the performance of an advanced GaN HEMT technology for millimeter-wave applications. Both DC and frequency-dependent measurements are performed on three multifinger on-wafer 0.15-µm transistors with different gate widths at different ambient temperatures for foreseeing GaN technology capability when applications require challenging frequency operation.File in questo prodotto:
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