Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED

We report on the illustration of the novel electron blocking layer (EBL) free AIlnN nanowire light-emitting diodes (LED) with a single-quantum well (SQW) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using Atlas TCAD and compared them with simulated AIGaN nanowire DUV LED. From the simulation results, a significant efficiency droop was observed in AIGaN LED, attributed to the significant electron leakage. However, compared to AIGaN nanowire DUV LED at a similar emission wavelength, the proposed (SQW) AIlnN- based light-emitter offers higher internal quantum efficiency without droop up to the current density of 1500 A/cm2 and high output optical power. Further research shows that the performance of the AIlnN DUV nanowire LED reduces with multiple QWs in the active region due to the presence of the non- uniform carrier distribution in the active region. This study provides important insights into the design of a new type of high- performance AIlnN nanowire DUV LED, by replacing currently used AIGaN semiconductors.