This paper focuses on the equivalent-circuit modelling of gallium-nitride (GaN) high electron-mobility transistors (HEMTs) on silicon carbide (SiC) substrate. The model is extracted from scattering (S-) parameters measurements by using the well-known 'cold' approach. The extracted model is successfully validated by investigating three devices with different gate widths in a wide range of bias points over a broad frequency range spanning from 45 MHz up to 50 GHz.
GaN HEMT Modeling versus Bias Point and Gate Width
Crupi G.
Primo
;Latino M.Secondo
;Gugliandolo G.;Fazio E.Penultimo
;Donato N.Ultimo
2023-01-01
Abstract
This paper focuses on the equivalent-circuit modelling of gallium-nitride (GaN) high electron-mobility transistors (HEMTs) on silicon carbide (SiC) substrate. The model is extracted from scattering (S-) parameters measurements by using the well-known 'cold' approach. The extracted model is successfully validated by investigating three devices with different gate widths in a wide range of bias points over a broad frequency range spanning from 45 MHz up to 50 GHz.File in questo prodotto:
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