The goal of the present work is to study the influence of the thermal effects on the small- and large-signal characteristics of gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices by using an extensive campaign of measurements. The studied devices were manufactured using a 0.15-μm process on silicon carbide (SiC) substrate. Experiments carried out on the three HEMTs with different gate widths are investigated in detail to get a thorough comprehension of how changing the backside temperature up to 100°C affects the transistor performance.
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs
Crupi G.
Primo
;Gugliandolo G.;Donato N.Penultimo
;
2024-01-01
Abstract
The goal of the present work is to study the influence of the thermal effects on the small- and large-signal characteristics of gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices by using an extensive campaign of measurements. The studied devices were manufactured using a 0.15-μm process on silicon carbide (SiC) substrate. Experiments carried out on the three HEMTs with different gate widths are investigated in detail to get a thorough comprehension of how changing the backside temperature up to 100°C affects the transistor performance.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
