Silicon Carbide (SiC) based detectors have been appointed as possible candidates for new-generation detectors for both radiation and charged particles. SiC is in fact a material characterized by a high radiation hardness, a strong mechanical resistance and thermal stability. This contribution describes the ongoing activity related to the study of Silicon Carbide devices as dosimeter or real time beam monitor, in the framework of SAMOTHRACE ecosystem. In particular, the development of accurate simulations, using the Geant4 toolkit, that consider the possible different configurations and manufactures of the detector, will be reported. This activity is a crucial step in understanding the contribution from the inter-pixel regions.
Advancements in Silicon Carbide-based detectors for high-performance radiation dosimetry and beam monitoring: from simulations to test phase
De Luca S.Investigation
;Quattrocchi L.Investigation
;Risitano F.Investigation
;Trimarchi M.Investigation
;
2025-01-01
Abstract
Silicon Carbide (SiC) based detectors have been appointed as possible candidates for new-generation detectors for both radiation and charged particles. SiC is in fact a material characterized by a high radiation hardness, a strong mechanical resistance and thermal stability. This contribution describes the ongoing activity related to the study of Silicon Carbide devices as dosimeter or real time beam monitor, in the framework of SAMOTHRACE ecosystem. In particular, the development of accurate simulations, using the Geant4 toolkit, that consider the possible different configurations and manufactures of the detector, will be reported. This activity is a crucial step in understanding the contribution from the inter-pixel regions.Pubblicazioni consigliate
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