In the context of reliability of silicon Power Devices, we conducted a study on Power MOS Gate Trench devices. The stress tensor inside the device is characterized through experimental analysis and Finite Element calculation. A test bench is developed to investigate the impact of mechanical stress on the gate leakage current of examined devices.
Experimental evaluation of oxide current on a low voltage trench gate power mos under mechanical bending conditions
Calabretta M.;
2020-01-01
Abstract
In the context of reliability of silicon Power Devices, we conducted a study on Power MOS Gate Trench devices. The stress tensor inside the device is characterized through experimental analysis and Finite Element calculation. A test bench is developed to investigate the impact of mechanical stress on the gate leakage current of examined devices.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
