The interband Raman Scattering efficiency is evaluated within the effective mass approximation. The Hamiltonian describing the electronic state contains non-local potentials and therefore the interaction with the radiation field has to be modified in order to preserve the gauge independence of physical quantities. The results are compared to previous calculations, showing the importance of non-local corrections.
ELECTRONIC INTERBAND RAMAN-SCATTERING IN DIRECT III-V SEMICONDUCTORS - NON-LOCAL EFFECTS
GIRLANDA, Raffaello;
1988-01-01
Abstract
The interband Raman Scattering efficiency is evaluated within the effective mass approximation. The Hamiltonian describing the electronic state contains non-local potentials and therefore the interaction with the radiation field has to be modified in order to preserve the gauge independence of physical quantities. The results are compared to previous calculations, showing the importance of non-local corrections.File in questo prodotto:
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