In a previous paper we outlined a geometric model for the thermodynamic description of extrinsic semiconductors with defects of dislocation. Applying a geometrization technique, within the rational extended irreversible thermodynamics with internal variables, the dynamical system for simple material elements of these media, the expressions of the entropy function and the entropy 1-form were obtained. In this contribution we deepen the study of this geometric model. We give a detailed description of the defective media under consideration and of the dislocation core tensor, we introduce the transformation induced by the process and, applying the closure conditions for the entropy 1-form, we derive the necessary conditions for the existence of the entropy function. These and other results are new in the paper. The derivation of the relevant entropy 1-form is the starting point to introduce an extended thermodynamical phase space.
Material element model for extrinsic semiconductors with defects of dislocations
Liliana, Restuccia;
2011-01-01
Abstract
In a previous paper we outlined a geometric model for the thermodynamic description of extrinsic semiconductors with defects of dislocation. Applying a geometrization technique, within the rational extended irreversible thermodynamics with internal variables, the dynamical system for simple material elements of these media, the expressions of the entropy function and the entropy 1-form were obtained. In this contribution we deepen the study of this geometric model. We give a detailed description of the defective media under consideration and of the dislocation core tensor, we introduce the transformation induced by the process and, applying the closure conditions for the entropy 1-form, we derive the necessary conditions for the existence of the entropy function. These and other results are new in the paper. The derivation of the relevant entropy 1-form is the starting point to introduce an extended thermodynamical phase space.Pubblicazioni consigliate
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