We present a new model to analyze the spatial characteristics of the output beam of conventional (straight-stripe) and tapered superluminescent light-emitting diodes. The device model includes both spontaneous and stimulated emission processes as well as a nonuniform carrier density distribution to correctly represent current spreading and carrier diffusion effects. Near- and far-field intensity profiles computed with this model are accurately verified over a wide range of injection currents by comparisons with experimental results measured from in-house fabricated devices. (C) 2003 Optical Society of America.

Realistic model for the output beam profile of stripe and tapered superluminescent light-emitting diodes

CAUSA, Federica;
2003

Abstract

We present a new model to analyze the spatial characteristics of the output beam of conventional (straight-stripe) and tapered superluminescent light-emitting diodes. The device model includes both spontaneous and stimulated emission processes as well as a nonuniform carrier density distribution to correctly represent current spreading and carrier diffusion effects. Near- and far-field intensity profiles computed with this model are accurately verified over a wide range of injection currents by comparisons with experimental results measured from in-house fabricated devices. (C) 2003 Optical Society of America.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/1914256
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