The thermoreflectance spectra between 3 and 9 eV have been measured for a series of GaSxSe1-x mixed crystals. The samples were single-crystal platelets grown from the vapour by the chemical-transport method. The measurements were performed with a nonpolarized light beam propagating approximately along the anisotropy crystal axis and the temperature was modulated around 65 K. Many structures in the reflectance spectra have been analysed in their dependence on the sulphur concentration in the mixed crystals. On this basis a detailed discussion of the optical spectra in GaS and in GaSe beyond the fundamental edge is given, and new information concerning the electronic energy levels is obtained both for these compounds and for InSe, which has an analogous crystal structure.
Thermoreflectance of the GaSxSe1-x mixed crystals between 3 and 9 eV
GIRLANDA, Raffaello;
1982-01-01
Abstract
The thermoreflectance spectra between 3 and 9 eV have been measured for a series of GaSxSe1-x mixed crystals. The samples were single-crystal platelets grown from the vapour by the chemical-transport method. The measurements were performed with a nonpolarized light beam propagating approximately along the anisotropy crystal axis and the temperature was modulated around 65 K. Many structures in the reflectance spectra have been analysed in their dependence on the sulphur concentration in the mixed crystals. On this basis a detailed discussion of the optical spectra in GaS and in GaSe beyond the fundamental edge is given, and new information concerning the electronic energy levels is obtained both for these compounds and for InSe, which has an analogous crystal structure.Pubblicazioni consigliate
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