Thermopower, conductivity and photoconductivity measurements as a function of temperature, from 130 to 320 C, have been carried out on manganese thiophosphate, MnPS3. The transport mechanisms involved in distinct temperature ranges and under different illumination conditions have been identified. At 130 C a dark conductivity value of 8.6x10-13 ohm-1 cm-1 has been measured, while photoconductivity values ranged from 8.8x10-13 ohm-1cm-1 to 6.1x10-8 ohm-1cm-1. In particular, the dark conductivity process has been attributed to holes in the phosphorus 3p, valence band. The results have been interpreted on the basis of a model, already used for NiPS3, that assumes a weak, ionic, interaction between the transition-metal and the sulphur atoms. A possible energy distribution of both valence and conduction bands, together with Mn 3d levels, is also provided.

Electronic conduction in the layered semiconductor MnPS3

GRASSO, Vincenzo;NERI, Fortunato;SILIPIGNI, Letteria;
1989-01-01

Abstract

Thermopower, conductivity and photoconductivity measurements as a function of temperature, from 130 to 320 C, have been carried out on manganese thiophosphate, MnPS3. The transport mechanisms involved in distinct temperature ranges and under different illumination conditions have been identified. At 130 C a dark conductivity value of 8.6x10-13 ohm-1 cm-1 has been measured, while photoconductivity values ranged from 8.8x10-13 ohm-1cm-1 to 6.1x10-8 ohm-1cm-1. In particular, the dark conductivity process has been attributed to holes in the phosphorus 3p, valence band. The results have been interpreted on the basis of a model, already used for NiPS3, that assumes a weak, ionic, interaction between the transition-metal and the sulphur atoms. A possible energy distribution of both valence and conduction bands, together with Mn 3d levels, is also provided.
1989
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/2078227
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