We describe a new evaporation method for preparing hydrogenated amorphous silicon films under different deposition conditions. The films obtained have characteristics comparable to those prepared by other conventional techniques. Infrared spectra and d.c. electrical conductivity results are reported.
A new evaporation method for preparing hydrogenated amorphous silicon films
GRASSO, Vincenzo;MEZZASALMA, Angela Maria;NERI, Fortunato
1982-01-01
Abstract
We describe a new evaporation method for preparing hydrogenated amorphous silicon films under different deposition conditions. The films obtained have characteristics comparable to those prepared by other conventional techniques. Infrared spectra and d.c. electrical conductivity results are reported.File in questo prodotto:
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