A model is proposed for the drop in electronic resistance of n-type semiconducting indium oxide (In2O3) upon illumination with light (350 nm,3.5 eV) as well as for the (light-enhanced) sensitivity of In2O3 to oxidizing gases. Essential features of the model are photoreduction and a rate llimiting oxygen-diffusion step. Ordered, mesoporous In2O3 with a high specific surface area serves as a versatile system for experimental studies. Analytical techniques comprise con- ductivity measurements under a controlled atmosphere (synthetic air, pure N2) and temperature-resolved in-situ Fourier transform infrared (FTIR) spectroscopy. IR measurements reveal that oxygen vacancies form a donor level 0.18 eV below the conduction band.
Photoreduction of Mesoporous In2O3: Mechanistic Model and Utility in Gas Sensing
DONATO, Nicola;LATINO, MARIANGELA;NERI, Giovanni;
2012-01-01
Abstract
A model is proposed for the drop in electronic resistance of n-type semiconducting indium oxide (In2O3) upon illumination with light (350 nm,3.5 eV) as well as for the (light-enhanced) sensitivity of In2O3 to oxidizing gases. Essential features of the model are photoreduction and a rate llimiting oxygen-diffusion step. Ordered, mesoporous In2O3 with a high specific surface area serves as a versatile system for experimental studies. Analytical techniques comprise con- ductivity measurements under a controlled atmosphere (synthetic air, pure N2) and temperature-resolved in-situ Fourier transform infrared (FTIR) spectroscopy. IR measurements reveal that oxygen vacancies form a donor level 0.18 eV below the conduction band.Pubblicazioni consigliate
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