An automatic measuring system is presented which allows the characterization of microwave transistors in terms of noise, gain and scattering parameters through noise figure measurements only. The use of one setup only, very low time consumption, repeatability and accuracy are the advantages of the method. The setup is driven by an original software which selects the best measuring conditions for accuracy and performs the measurements and data-processing routines without any action of the operator. The testing of 32 samples of HEMT's of four families in the 8-12 GHz frequency range has been carried out before and after 300 hours of storage at 300 °C. The model of the typical device of each series has been extracted by means of the scattering and noise parameter sets so obtained.

Automatic characterization and modeling of microwave low-noise HEMTs

CADDEMI, Alina;
1992-01-01

Abstract

An automatic measuring system is presented which allows the characterization of microwave transistors in terms of noise, gain and scattering parameters through noise figure measurements only. The use of one setup only, very low time consumption, repeatability and accuracy are the advantages of the method. The setup is driven by an original software which selects the best measuring conditions for accuracy and performs the measurements and data-processing routines without any action of the operator. The testing of 32 samples of HEMT's of four families in the 8-12 GHz frequency range has been carried out before and after 300 hours of storage at 300 °C. The model of the typical device of each series has been extracted by means of the scattering and noise parameter sets so obtained.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/2175435
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