Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%-50%, were deposited onto Si (100) wafers by plasma enhanced chemical vapor deposition. Various techniques, such as X-ray photoelectron spectroscopy (XPS), infrared (IR) transmission spectroscopy, optical microscopy, and microhardness measurements were used to characterize the laser-induced composition evolution and crystallization processes. The characteristics of the crystallized samples are promising for application as protective coatings for devices used in severe operating conditions.
Crystallization of amorphous silicon carbide thin films by laser treatment
PROVERBIO, Edoardo;
1996-01-01
Abstract
Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%-50%, were deposited onto Si (100) wafers by plasma enhanced chemical vapor deposition. Various techniques, such as X-ray photoelectron spectroscopy (XPS), infrared (IR) transmission spectroscopy, optical microscopy, and microhardness measurements were used to characterize the laser-induced composition evolution and crystallization processes. The characteristics of the crystallized samples are promising for application as protective coatings for devices used in severe operating conditions.Pubblicazioni consigliate
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