Due to the increasing interest in extending the frequency limits of silicon devices for telecommunication applications, we have analyzed the performance of different series of advanced polysilicon bipolar transistors. The devices were grouped according to their emitter finger number and were characterized over the 2-6 GHz frequency range in terms of noise, gain and scattering parameters at different bias conditions. A bias-dependent model extraction including noise sources has been subsequently performed for each series and a comparative analysis has been carried out. The results of this analysis point out distinguishing features of this advanced bipolar process which allows for realizing highly competitive bipolar devices for use in telecommunication equipment at low microwave frequencies.

Low-power PSA transistors for microwave communication systems: comparison among bias-dependent models extracted from measured noise and scattering parameters

CADDEMI, Alina;
1995-01-01

Abstract

Due to the increasing interest in extending the frequency limits of silicon devices for telecommunication applications, we have analyzed the performance of different series of advanced polysilicon bipolar transistors. The devices were grouped according to their emitter finger number and were characterized over the 2-6 GHz frequency range in terms of noise, gain and scattering parameters at different bias conditions. A bias-dependent model extraction including noise sources has been subsequently performed for each series and a comparative analysis has been carried out. The results of this analysis point out distinguishing features of this advanced bipolar process which allows for realizing highly competitive bipolar devices for use in telecommunication equipment at low microwave frequencies.
1995
0780325168
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/2408021
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? ND
social impact