The performance of microwave noise parameters of HEMTs vs. temperature has been investigated by applying a new simplified measurement procedure, such method relies on the extraction of a noisy circuit model from measured scattering parameters together with one noise figure measurement in input matched conditions, (namely, F50). Then the four noise parameters of the device under test are extracted using a suitable computer-aided model analysis. Further investigation have been carried out to verity the reliability of the prediction of F50 values vs. temperature by means a simple noise temperature ratio.

Microwave noise parameters of HEMTs vs. temperature by a simplified measurement procedure

CADDEMI, Alina;
1996-01-01

Abstract

The performance of microwave noise parameters of HEMTs vs. temperature has been investigated by applying a new simplified measurement procedure, such method relies on the extraction of a noisy circuit model from measured scattering parameters together with one noise figure measurement in input matched conditions, (namely, F50). Then the four noise parameters of the device under test are extracted using a suitable computer-aided model analysis. Further investigation have been carried out to verity the reliability of the prediction of F50 values vs. temperature by means a simple noise temperature ratio.
1996
0780331303
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/2408221
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