In the present paper we exploit the results of the characterization and modeling vs, frequency (2-18 GHz) and temperature (-50÷20 °C) of a series of pseudomorphlc HEMTs to carry out an investigation on the noise parameter. We had previously observed from the characterization of several HEMT series at room temperature, that a close relationship exists between the optimum input termination reflection coefficient Γo and the scattering parameter S11 and it always occurred that |S11|>|>Γo| over the frequency range given above. We here analyze the performance of |Γo| at lower temperatures and use the equivalent circuit model to explore the cause of its variations with respect to its behavior at 20 °C.
Performance of the optimum noise source reflection coefficient Γo vs. temperature in microwave HEMTs by model analysis
CADDEMI, Alina;
1995-01-01
Abstract
In the present paper we exploit the results of the characterization and modeling vs, frequency (2-18 GHz) and temperature (-50÷20 °C) of a series of pseudomorphlc HEMTs to carry out an investigation on the noise parameter. We had previously observed from the characterization of several HEMT series at room temperature, that a close relationship exists between the optimum input termination reflection coefficient Γo and the scattering parameter S11 and it always occurred that |S11|>|>Γo| over the frequency range given above. We here analyze the performance of |Γo| at lower temperatures and use the equivalent circuit model to explore the cause of its variations with respect to its behavior at 20 °C.Pubblicazioni consigliate
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