Among the noise parameters expressed in the reflection coefficient form (Fo, |Γo|, /Γo and rn), the noise resistance rn is of critical importance to the design of low-noise receivers. Very low values of rn allow for optimizing the performance of microwave broad-band amplifiers employed in receiver front-ends. We here present a sensitivity analysis performed on typical circuit models of FET's previously characterized in our lab. Such analysis has been aimed at determining the key elements that mostly affect the behavior of rn at microwave frequencies. We have also observed how the noise performance may be improved by tuning the value of the input (gate, source) inductances which are responsible of the U-shaped curves typically observed for rn in MESFET's and HEMT's.
On the noise resistance of HEMT's for improving the performance of microwave low-noise amplifiers
CADDEMI, Alina;
1997-01-01
Abstract
Among the noise parameters expressed in the reflection coefficient form (Fo, |Γo|, /Γo and rn), the noise resistance rn is of critical importance to the design of low-noise receivers. Very low values of rn allow for optimizing the performance of microwave broad-band amplifiers employed in receiver front-ends. We here present a sensitivity analysis performed on typical circuit models of FET's previously characterized in our lab. Such analysis has been aimed at determining the key elements that mostly affect the behavior of rn at microwave frequencies. We have also observed how the noise performance may be improved by tuning the value of the input (gate, source) inductances which are responsible of the U-shaped curves typically observed for rn in MESFET's and HEMT's.Pubblicazioni consigliate
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