The up to date version working up to 40 GHz of a noise figure measuring system for the characterization of transistors in terms of noise, gain and scattering parameters through noise figure measurements only is presented. In fully automated version the method is rapid and very accurate but it is so difficult to assemble and handle that a very skilled operator is needed. This can be accepted in a research Laboratory but is a very hard task for manufacturers to test their products. So, we have recently set-up a 'simplified' method which is rather simple to run and accurate enough for industrial applications. The method is based on the extraction of a noise model of the transistor from measurements of [S] through a ANA and of one noise figure only.
Full characterization of microwave low noise HEMTs: measurements vs. modeling
CADDEMI, Alina;
1996-01-01
Abstract
The up to date version working up to 40 GHz of a noise figure measuring system for the characterization of transistors in terms of noise, gain and scattering parameters through noise figure measurements only is presented. In fully automated version the method is rapid and very accurate but it is so difficult to assemble and handle that a very skilled operator is needed. This can be accepted in a research Laboratory but is a very hard task for manufacturers to test their products. So, we have recently set-up a 'simplified' method which is rather simple to run and accurate enough for industrial applications. The method is based on the extraction of a noise model of the transistor from measurements of [S] through a ANA and of one noise figure only.Pubblicazioni consigliate
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