Among the frequency-dependent noise parameters Fo, Γo (magnitude and angle) and rn the value of Fo represents the minimum noise contribution of an active device in absence of any noise mismatch at the device input (which can be obtained at a single frequency) while rn is a measure of the noise figure degradation upon departure from the optimum value of the noise source reflection coefficient. As such, the performance of rn is of fundamental importance for the circuit designer when a broad-band low-noise amplifier has to be realized. In this paper, a comparative analysis and related comments are presented on the behavior of this noise parameter for different low-noise device types which have been characterized and modeled in our lab over the last ten years.
Comparative performance of the equivalent noise resistance of low-noise microwave FET's
CADDEMI, Alina;
1996-01-01
Abstract
Among the frequency-dependent noise parameters Fo, Γo (magnitude and angle) and rn the value of Fo represents the minimum noise contribution of an active device in absence of any noise mismatch at the device input (which can be obtained at a single frequency) while rn is a measure of the noise figure degradation upon departure from the optimum value of the noise source reflection coefficient. As such, the performance of rn is of fundamental importance for the circuit designer when a broad-band low-noise amplifier has to be realized. In this paper, a comparative analysis and related comments are presented on the behavior of this noise parameter for different low-noise device types which have been characterized and modeled in our lab over the last ten years.Pubblicazioni consigliate
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