Different series of double polysilicon bipolar transistors have been characterized in terms of noise and scattering parameters over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. Extraction of a circuit model has been accomplished for each series based on an improved T-equivalent circuit including noise sources. By such a model, novel analytical expressions for the noise parameters Fo (minimum noise figure), |Γo| (magnitude of the optimum source reflection coefficient) and rn (normalized noise resistance) have been derived for this polysilicon self-aligned structure. Following that, a sensitivity analysis has been performed for evaluating the influence of the device model elements upon the noise parameters with specific concern for the polysilicon layer resistance.

On the influence of polysilicon layer resistance upon the noise performance of microwave BJTs

CADDEMI, Alina;
1997

Abstract

Different series of double polysilicon bipolar transistors have been characterized in terms of noise and scattering parameters over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. Extraction of a circuit model has been accomplished for each series based on an improved T-equivalent circuit including noise sources. By such a model, novel analytical expressions for the noise parameters Fo (minimum noise figure), |Γo| (magnitude of the optimum source reflection coefficient) and rn (normalized noise resistance) have been derived for this polysilicon self-aligned structure. Following that, a sensitivity analysis has been performed for evaluating the influence of the device model elements upon the noise parameters with specific concern for the polysilicon layer resistance.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/2429282
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