The noise parameters Fo, Γo and rn are a complete representation of the noise performance of any linear twoport. We focused upon rn which is a measure of the noise figure degradation when the source reflection coefficient departs from the optimum value Γo. In the present paper, the behavior of rn is analyzed as a function of the main elements of the noisy electrical model which reproduces the device performance. Such a study is aimed at evidencing the factors which allow for decreasing either the values and the frequency-dependence of rn. By optimizing rn, great improvements can be obtained in the performance of broad-band microwave low-noise amplifiers. --------------------------------------------------------------------------------
Dependence of the noise resistance of microwave FET's from the device characteristics
CADDEMI, Alina;
1997-01-01
Abstract
The noise parameters Fo, Γo and rn are a complete representation of the noise performance of any linear twoport. We focused upon rn which is a measure of the noise figure degradation when the source reflection coefficient departs from the optimum value Γo. In the present paper, the behavior of rn is analyzed as a function of the main elements of the noisy electrical model which reproduces the device performance. Such a study is aimed at evidencing the factors which allow for decreasing either the values and the frequency-dependence of rn. By optimizing rn, great improvements can be obtained in the performance of broad-band microwave low-noise amplifiers. --------------------------------------------------------------------------------Pubblicazioni consigliate
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