An Nd:YAG laser, 1064 nm wavelength, 9 ns pulse width, 300–900mJ pulse energy and 1010W/cm2 intensity is employed to ablate a solid Ge target placed in high vacuum. Ions are produced in vacuum and are emitted mainly along the normal to the target surface. The free ion expansion process occurs in a constant-potential chamber placed at 30 kV positive voltage with respect to the ground. The postacceleration system permits to extract Ge ions with energy proportional to the charge state. Ion Energy Analyzer (IEA) is employed to measure the energy-to-charge ratio of the Ge ions without and with the use of the post-acceleration system. The ion energy distribution can be measured from time-of-flight measurements. Multi-energetic ion implantation has been performed on Silicon substrates. Ge depth profiles, measured through RBS analysis are in good agreement with IEA spectroscopy measurements.
Ge and Ti post-ion acceleration from laser ion source
TORRISI, Lorenzo;
2010-01-01
Abstract
An Nd:YAG laser, 1064 nm wavelength, 9 ns pulse width, 300–900mJ pulse energy and 1010W/cm2 intensity is employed to ablate a solid Ge target placed in high vacuum. Ions are produced in vacuum and are emitted mainly along the normal to the target surface. The free ion expansion process occurs in a constant-potential chamber placed at 30 kV positive voltage with respect to the ground. The postacceleration system permits to extract Ge ions with energy proportional to the charge state. Ion Energy Analyzer (IEA) is employed to measure the energy-to-charge ratio of the Ge ions without and with the use of the post-acceleration system. The ion energy distribution can be measured from time-of-flight measurements. Multi-energetic ion implantation has been performed on Silicon substrates. Ge depth profiles, measured through RBS analysis are in good agreement with IEA spectroscopy measurements.Pubblicazioni consigliate
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