In this paper, we report a purposely designed instrumentation and a jump detection procedure for the measurement of single-electron phenomena in solid-state nonvolatile memories based on a silicon nanocrystal floating gate metal-oxide-semiconductor field-effect transistor. The stepwise evolution of the drain current of a memory cell after a "write"operation is monitored by means of a purposely designed low-noise acquisition system with a bandwidth of up to 10 kHz. The advantage of the measurement system background noise and bandwidth over a traditional semiconductor parameter analyzer performance is evident in the detection and classification of single-electron events. © 2008 IEEE.
Detection and classification of single-electron jumps in Si nanocrystal memories
GIUSI, Gino;
2008-01-01
Abstract
In this paper, we report a purposely designed instrumentation and a jump detection procedure for the measurement of single-electron phenomena in solid-state nonvolatile memories based on a silicon nanocrystal floating gate metal-oxide-semiconductor field-effect transistor. The stepwise evolution of the drain current of a memory cell after a "write"operation is monitored by means of a purposely designed low-noise acquisition system with a bandwidth of up to 10 kHz. The advantage of the measurement system background noise and bandwidth over a traditional semiconductor parameter analyzer performance is evident in the detection and classification of single-electron events. © 2008 IEEE.Pubblicazioni consigliate
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