In this paper, we report the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide field effect transistors (pMOSFETs) with a Si passivated surface. The gate stack consists of Hf O2 Si O2 dielectric with TiNTaN metal gate. The observed temperature dependence of the gate current indicates that the dominant charge transport mechanism through the gate dielectric consists of Poole-Frenkel conduction. Gate current 1f noise is more than two orders higher in the case of Ge pMOSFETs when compared to reference Si pMOSFETs. Ge outdiffusion into the gate oxide is the suspected cause for the enhanced Poole-Frenkel conduction and the high gate current 1f noise in Ge pMOSFETs. © 2008 American Institute of Physics.
On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with TiNTaNHf O2 Si O2 gate stack
GIUSI, Gino;
2008-01-01
Abstract
In this paper, we report the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide field effect transistors (pMOSFETs) with a Si passivated surface. The gate stack consists of Hf O2 Si O2 dielectric with TiNTaN metal gate. The observed temperature dependence of the gate current indicates that the dominant charge transport mechanism through the gate dielectric consists of Poole-Frenkel conduction. Gate current 1f noise is more than two orders higher in the case of Ge pMOSFETs when compared to reference Si pMOSFETs. Ge outdiffusion into the gate oxide is the suspected cause for the enhanced Poole-Frenkel conduction and the high gate current 1f noise in Ge pMOSFETs. © 2008 American Institute of Physics.Pubblicazioni consigliate
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