The microstructural and functional characterization of pure and Ga (1-5 at.%)-doped ZnO nanoparticles synthetized by sol-gel method is reported. All the samples, characterized by XRD and TEM, showed the nanocrystalline ZnO wurtzite structure. However, depending on the Ga content, the morphological, microstructural and electrical properties of doped samples changed markedly with respect to the undoped ZnO. The effect of gallium dopant on sensing properties of thick films of ZnO nanoparticles, deposited on alumina substrates provided with Pt interdigited electrodes for the application as CO resistive sensors, have been investigated. Sensors based on Ga-doped ZnO exhibited a higher response (R-0/R = 9, to 50 ppm of CO at the operating temperature of 250 degrees C) and lower response/recovery time (8 and 35 s, respectively) than the pure ZnO sample, allowing to detect CO at sub-ppm concentrations in air. (C) 2015 Elsevier B.V. All rights reserved.

CO sensing properties of Ga-doped ZnO prepared by sol-gel route

BONAVITA, ANNA;DONATO, Nicola;LEONARDI, SALVATORE GIANLUCA;NERI, Giovanni
2015

Abstract

The microstructural and functional characterization of pure and Ga (1-5 at.%)-doped ZnO nanoparticles synthetized by sol-gel method is reported. All the samples, characterized by XRD and TEM, showed the nanocrystalline ZnO wurtzite structure. However, depending on the Ga content, the morphological, microstructural and electrical properties of doped samples changed markedly with respect to the undoped ZnO. The effect of gallium dopant on sensing properties of thick films of ZnO nanoparticles, deposited on alumina substrates provided with Pt interdigited electrodes for the application as CO resistive sensors, have been investigated. Sensors based on Ga-doped ZnO exhibited a higher response (R-0/R = 9, to 50 ppm of CO at the operating temperature of 250 degrees C) and lower response/recovery time (8 and 35 s, respectively) than the pure ZnO sample, allowing to detect CO at sub-ppm concentrations in air. (C) 2015 Elsevier B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/3065780
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