Hydrogenated amorphous silicon (a-Si:H) films are deposited by PECVD technique, varying the substrate temperature from 100 C to 250 C, on porous anodic aluminum (PAl) layers. A combination of micro-Raman, X-ray photoelectron, Fourier transform infrared spectroscopies, atomic force and scanning/transmission electron microscopies analyses have shown that the optical properties of the a-Si:H films depend on the substrate temperature and mainly on the homogeneous nanoporous structure of the PAl layers on which the a-Si:H films were grown.
An investigation of the optical and structural properties of PECVD a-SiH thin films grown on a porous anodic aluminum template
FAZIO, Enza;NERI, Fortunato;
2017-01-01
Abstract
Hydrogenated amorphous silicon (a-Si:H) films are deposited by PECVD technique, varying the substrate temperature from 100 C to 250 C, on porous anodic aluminum (PAl) layers. A combination of micro-Raman, X-ray photoelectron, Fourier transform infrared spectroscopies, atomic force and scanning/transmission electron microscopies analyses have shown that the optical properties of the a-Si:H films depend on the substrate temperature and mainly on the homogeneous nanoporous structure of the PAl layers on which the a-Si:H films were grown.File in questo prodotto:
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