Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode

Microwave detection has a huge number of applications in physics and engineering. It has already been shown that biased spin torque diodes have performance overcoming the CMOS counterpart in terms of sensitivity. In this regard, the spin torque diodes are promising candidates for the next generation of microwave detectors. Here, we show that the optimization of the rectification process based on the injection locking mechanism gives an ultrahigh sensitivity exceeding 200 kV/W with an output resistance below 1 kO while maintaining the advantages over other mechanisms such as vortex expulsion or non-linear resonance, to work without a bias magnetic field.