In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 μm2 gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
Crupi G.Secondo
;
2021-01-01
Abstract
In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 μm2 gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.File in questo prodotto:
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