The paper presents a system for noise measurements in infrared photodetectors characterized by low shunt resistances based on a two-channel ultra-low-noise voltage amplifier with paralleled discrete JFETs at the input stages. Using cross correlation method, a background noise well below of 10−19 V2/Hz can be obtained at frequencies above 10 Hz. To facilitate the estimation of the noise in such a wide frequency range (5 decades), we also developed a software based on the QLSA library. As a result of these efforts, the equivalent input voltage noise of the system is below 10−19 V2/Hz at 10 Hz and 10−20 V2/Hz for frequencies above a few hundred Hz. The system effectiveness is demonstrated by noise measurements at room temperature on advanced InAsxSb1-x photodetectors characterized by an active area of 1 mm2 and a shunt resistance below 10 Ω.

Low-frequency noise measurements of IR photodetectors with voltage cross correlation system

Ciofi C.;Scandurra G.;
2021-01-01

Abstract

The paper presents a system for noise measurements in infrared photodetectors characterized by low shunt resistances based on a two-channel ultra-low-noise voltage amplifier with paralleled discrete JFETs at the input stages. Using cross correlation method, a background noise well below of 10−19 V2/Hz can be obtained at frequencies above 10 Hz. To facilitate the estimation of the noise in such a wide frequency range (5 decades), we also developed a software based on the QLSA library. As a result of these efforts, the equivalent input voltage noise of the system is below 10−19 V2/Hz at 10 Hz and 10−20 V2/Hz for frequencies above a few hundred Hz. The system effectiveness is demonstrated by noise measurements at room temperature on advanced InAsxSb1-x photodetectors characterized by an active area of 1 mm2 and a shunt resistance below 10 Ω.
2021
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/3207068
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