Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Finocchio G.
;
2021-01-01

Abstract

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.
2021
Inglese
ELETTRONICO
Si
No
No
No
2500
Euro
Nature Research
12
1
4555-1
4555-9
9
https://www.nature.com/articles/s41467-021-24854-7
Internazionale
Esperti anonimi
asymmetry; equipment; experimental study; induced response; magnetization; symmetry; torque
info:eu-repo/semantics/article
Zheng, Z.; Zhang, Y.; Lopez-Dominguez, V.; Sanchez-Tejerina, L.; Shi, J.; Feng, X.; Chen, L.; Wang, Z.; Zhang, Z.; Zhang, K.; Hong, B.; Xu, Y.; Zhang,...espandi
14.a Contributo in Rivista::14.a.1 Articolo su rivista
18
262
open
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/3212272
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