The disadvantage of 4H-SiC/SiO2 compared to the Si/SiO2 interface is the high trap density limiting the channel mobility and gate oxide stability and often leads to early failure in power MOSFETs. One important process improvement is the nitridation of the oxide. In this work, we investigate techniques to characterize and quantify the nitridation effect, validating the better performance after NO nitridation due to passivation of near interface oxide traps (NIOTs) and bulk charges as well as an improved gate oxide reliability.
Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC
Mazza B.;Patane S.;
2021-01-01
Abstract
The disadvantage of 4H-SiC/SiO2 compared to the Si/SiO2 interface is the high trap density limiting the channel mobility and gate oxide stability and often leads to early failure in power MOSFETs. One important process improvement is the nitridation of the oxide. In this work, we investigate techniques to characterize and quantify the nitridation effect, validating the better performance after NO nitridation due to passivation of near interface oxide traps (NIOTs) and bulk charges as well as an improved gate oxide reliability.File in questo prodotto:
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