HTRB effects on threshold instability of 4H-SiC PowerMOSFET with carrots defects

This article presents a reliability study on conventional 650 V SiC MOSFETs subject to carrot-like defects under High Temperature Reverse Bias (HTRB) stress. The instabilities of some parameters are monitored, and the drift analysis of the most critical one is presented. The study aims to isolate the impact of carrot defects by comparing devices with these defects to those without and the analysis of the electrical characteristics on samples subjected to HTRB shows an evident difference between devices with and without defects.