Dynamic Reverse Bias: Lifetime Modeling for SiC MOSFET Automotive Application

This work investigates the reliability of SiC MOSFET under dynamic reverse bias (DRB) conditions during mission profile. Through a dedicated campaign with an innovative experimental setup, we build a lifetime model to predict reliability during applicative mission profile. We conduct a long-term DRB test on a robust sample size and obtain the Weibull statistics. Using the lifetime model, we calculate the expected unreliability failure during mission profile, demonstrating SiC device robustness.